| abstract |
The reliability of a bonding region between a bonding wire and an electrode pad during high-temperature operation is improved. A semiconductor device includes a semiconductor chip, an AlCu pad including Al as a main component and further including Cu, an inner lead provided outside the semiconductor chip, and a semiconductor chip. And a CuP wire 111 which is a connecting member mainly containing Cu and is sealed with a sealing resin 115 which does not substantially contain halogen. The connection region of the AlCu pad 107 and the CuP wires 111, Al and Cu composition ratio provided different alloy layers, alloy layers, and CuAl 2 layer, with provided between the CuAl 2 layer and CuP wire 111 And a layer having a relatively lower Al composition ratio than the CuAl 2 layer. [Selection] Figure 1 |