| abstract |
The reliability of a bonding region between a bonding wire and an electrode pad during high-temperature operation is improved. In a semiconductor device, a semiconductor chip is provided on a lead frame and these are sealed with a sealing resin. A lead frame 119 is provided on the side of the lead frame 121. A part of the lead frame 119 is sealed with a sealing resin 115 as inner leads 117. The sealing resin 115 is composed of a resin composition that does not substantially contain halogen. Further, the exposed portion of the Al pad 107 provided on the semiconductor chip 102 and the inner lead 117 are electrically connected by the AuPd wire 111. [Selection] Figure 1 |