| abstract |
Aqueous water useful for removing metals such as nickel, cobalt, titanium, tungsten, and their alloys after metal silicide formation by rapid thermal annealing during the manufacture of complementary metal oxide semiconductor (CMOS) transistors Metal etching composition. The aqueous metal etching composition is also useful for selectively removing metal silicides and / or metal nitrides for wafer rework. In one formulation, the aqueous metal etching composition contains oxalic acid and a chloride-containing compound, and in another formulation, the composition comprises an oxidizing agent, such as hydrogen peroxide, and a fluoride source, such as Contains fluoroboric acid. In another specific formulation, the composition includes fluoroboric acid and boric acid to effectively etch nickel, cobalt, titanium, tungsten, metal alloys, metal silicides and metal nitrides without attacking the dielectric and substrate. contains. |