abstract |
A resist underlayer film material, which has a high etching rate, and therefore shortens an etching time to reduce a film loss of a resist pattern during etching and to suppress a deformation of the pattern. Therefore, a resist underlayer film material that can perform pattern transfer with high accuracy and can form a good pattern on a substrate is provided. A resist underlayer film material comprising a polymer having at least a repeating unit represented by the following general formula (1). Embedded image [Selection figure] None |