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filingDate 2007-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99a50b63a22331ccffe9ae3fae56819b
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publicationDate 2008-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008243838-A
titleOfInvention Workpiece processing method, wiring forming method, and semiconductor substrate manufacturing method
abstract The present invention provides a processing method of a workpiece that can be easily processed into a desired shape without causing mechanical damage and thermal damage. A sample 1 made of at least one material selected from the group consisting of silicon, silicon carbide, and a semiconductor containing a group III-V element is used as a workpiece, and the sample 1 is made of an oxidizing agent, a fluoride, By immersing in a treatment liquid 8 made of an aqueous solution containing hydrogen or fluoride ions, and contacting the wire 2 provided at least on the surface with a layer made of a catalyst in the oxidation reaction of the material in the treatment liquid 8, The portion of the sample 1 in contact with the wire 2 is oxidized and dissolved in the processing solution 8, and the sample 2 is cut or the sample 2 is moved by gravity as the sample 1 is dissolved. A notch is formed in the sample 1. [Selection] Figure 2
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