| abstract |
A method for forming a hole in a crystal substrate which characterized in that it comprises providing a single crystal substrate (1) which has silicon as a main component and has been so formed as to have a (100) face being rectangular to the depth direction of the hole to be formed and an etching fluid having a hydrogen fluoride concentration of 10 % or less, when a linear hole is to be formed, or providing an etching fluid having a hydrogen fluoride concentration of 28 % or more, when a spiral hole is to be formed, allowing particles (2) of a metal such as silver, platinum or palladium to attach on the surface of the substrate by a means such as electroless plating, and then carrying out a chemical etching. The above method can be suitably used for preparing, at a low cost, a single crystal substrate (1) having a deep hole (3) of a linear or spiral form. |