| abstract |
The present invention provides a post-CMP processing solution that can efficiently remove substances adhering to the surface of a wiring layer or an insulating film. SOLUTION: water, amphoteric surfactant, anionic surfactant, complexing agent, resin particles having a carboxyl group and a sulfonyl group on the surface and having a primary particle diameter of 10 nm to 60 nm, A treatment liquid containing tetramethylammonium hydroxide. The pH is 4 or more and 9 or less, and the polishing rate of the insulating film and the conductive film is 10 nm / min or less. [Selection figure] None |