| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4d72711e97d894c55af805c9de2053ab |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38 |
| filingDate |
2007-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cdb1388402fabe889cccadde8de93fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c59485851f31050bab7984e3210153a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be835a103388ce1c8816005f37adda0b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91e62a9ca5365dc0fd15480db51e2560 |
| publicationDate |
2008-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008191644-A |
| titleOfInvention |
Compositions and methods for immersion lithography |
| abstract |
A novel photoresist composition useful for immersion lithography is provided. Novel photoresist compositions useful for immersion lithography are provided. Preferred photoresist compositions of the present invention include one or more materials having a water contact angle that can be altered by treatment with a base, and / or one or more materials comprising fluorinated photoacid labile groups. Material and / or one or more materials comprising acid groups spaced from the polymer backbone. Particularly preferred photoresists of the present invention can reduce leaching of resist material into an immersion fluid that contacts the resist layer during an immersion lithography process. [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8535871-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012008500-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010152343-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011118335-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010147099-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010140637-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5626207-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015163981-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013228750-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8815490-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016218484-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5472300-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101729998-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101368585-B1 |
| priorityDate |
2006-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |