| abstract |
A resist underlayer film material comprising a polymer having a repeating unit represented by the general formula (1), which is a resist underlayer film material of a multilayer resist film used in lithography. [Effect] According to the present invention, it is a resist underlayer film material for a multi-layer resist process, particularly for a three-layer resist process, and functions as an excellent antireflection film especially for exposure at a short wavelength. A resist underlayer film material excellent in etching resistance can be obtained. [Selection figure] None |