http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007256787-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-114 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2006-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02602d7bf4a6b83c0a7c1feabedae8f0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51fa0ce4d4abeeaeb492059877858d89 |
| publicationDate | 2007-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007256787-A |
| titleOfInvention | Resist composition, method for forming resist pattern, semiconductor device and method for manufacturing the same |
| abstract | The resist pattern is thickened uniformly by the resist pattern thickening material regardless of the direction of the resist pattern, the density difference, etc., and without depending on the type of the resist pattern thickening material. Providing a resist composition that can easily and efficiently form a fine resist pattern that exceeds the exposure limit at low cost. A resist composition of the present invention includes at least an alicyclic compound having a melting point of 90 to 150 ° C. and a resin. In the method for manufacturing a semiconductor device of the present invention, after forming a resist pattern on the surface to be processed using the resist composition, a resist pattern thickening material is applied so as to cover the surface of the resist pattern. A resist pattern forming step for thickening the pattern, and a patterning step for patterning the surface to be processed by etching using the thickened resist pattern as a mask. [Selection] Figure 2A |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013076748-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013133471-A |
| priorityDate | 2006-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 96.