| abstract |
The present invention provides a resist pattern thickening material and the like which can form a surface layer having excellent etching resistance by increasing the thickness of a resist pattern and can make the pattern finer. A resist pattern thickening material containing a resin, a cross-linking agent, and a cyclic structure compound or a resin having a cyclic structure in part and a cross-linking agent. A resist pattern having a surface layer on a resist pattern and having an etching rate (Å / s) ratio (inner layer / surface layer) of 1.1 or more between the surface layer and the inner layer under the same conditions. A method for producing a resist pattern, comprising forming a resist pattern and then applying the thickening material to the pattern surface. A semiconductor device including a step of forming a resist pattern on an underlayer, applying the thickening material to the surface of the pattern to increase the thickness of the pattern, and patterning the underlayer by etching using the pattern as a mask Manufacturing method. [Selection diagram] Fig. 1 |