| abstract |
A method for forming a paraelectric thin film having a paraelectric property, a low leakage current, and a high dielectric constant is provided. A mixture of at least one metal M selected from Ba, Sr, Bi, Sc, V, Y, Zr, Nb, Hf, Ta, Si, Ge, and Sn and an alkoxide of titanium is hydrolyzed. Alternatively, a composition containing an organometallic compound is prepared by hydrolyzing the metal M and titanium composite metal alkoxide, the composition is applied onto a substrate, and the resulting coating film is temporarily fired. Then, the process of forming a cured thin film is defined as one cycle, and this cycle is repeated a plurality of times, and the laminated cured thin film is subjected to main baking. [Selection figure] None |