| abstract |
PROBLEM TO BE SOLVED: To improve resist film thickness reduction and pattern profile deterioration after pattern development at the time of normal exposure, and further improve the elution of resist components into the immersion liquid at the time of immersion exposure, Provided are a positive resist composition with improved resist pattern collapse and profile deterioration after immersion exposure, and a pattern forming method using the same. SOLUTION: (A) A resin whose solubility in an alkaline developer is increased by the action of an acid, (B) a compound that generates an acid upon irradiation with actinic rays or radiation, and (F) a surfactant having a basic group. A positive resist composition characterized by comprising: [Selection figure] None |