| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_74973199515dbabd2310245aab03e282 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-38 |
| filingDate |
2005-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f22e3c929af0fe9ddf24677e43211b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_146d67a1a66fc491fc436983d8caa722
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58c280f9de314553a34c2e65f1844d8a |
| publicationDate |
2006-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006237478-A |
| titleOfInvention |
Boron nitride film forming method and film forming apparatus |
| abstract |
PROBLEM TO BE SOLVED: To provide a boron nitride film forming method and film forming apparatus in which a dense film is formed and mechanical strength is increased. SOLUTION: Diborane gas and ammonia gas are introduced into a film forming chamber 2 by gas nozzles 11 and 12, plasma 10 is generated in the film forming chamber by a high frequency antenna 7, and the diborane gas and ammonia gas are reacted. The low frequency power supply 15 applies power to the substrate 6 disposed in the film forming chamber 2 with the lower limit of the power that can generate the sputter etching action and the upper limit of the electric power at which the substantial film formation is not stopped by the sputter etching action. A bias power is applied to form a thin film 5 of a boron nitride film on the substrate 6. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010047375-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108220922-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7049894-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190113619-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018056345-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102205227-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102084296-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10388524-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108220922-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180069705-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019186306-A |
| priorityDate |
2005-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |