| abstract |
The invention relates to a film forming method, a boron film and a film forming device applied to semiconductor devices. A reaction gas containing boron-containing gas, such as B2H6 gas and He gas, is supplied in a processing atmosphere adjusted to a pressure within the range of 0.67Pa to 33.3Pa, that is, 5mTorr to 250mTorr, in the processing container (2), and the The reactive gas is plasmatized. Using this plasma, a boron film is formed on the wafer. By forming the film using the energy of the plasma, the temperature during the film forming process can be lowered, whereby the boron film can be formed while suppressing the influence of heat. The boron film has high etching resistance and high etching selectivity, and thus is useful as a semiconductor device material. |