Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7f278bf3e3bd12896f71fc0e87dd1684 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
filingDate |
2004-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0a26139b4b1350a84e80f2094a0ba02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_681a8aca5bdb94ae56bd0e7e736ec963 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f88e5f04faa68c3b1b19f33d569bbeb |
publicationDate |
2005-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2005251814-A |
titleOfInvention |
Method and apparatus for dry etching of interlayer insulating film |
abstract |
PROBLEM TO BE SOLVED: To make a resist mask fragile when fine patterning is performed using a laser having a short wavelength in a photolithography process. In this case, if etching is performed in a plasma atmosphere, the resist mask is damaged and edge roughness occurs in the edge portion of the patterned region. In this case, a uniform etching shape cannot be obtained in the depth direction. SOLUTION: A mixed gas containing a fluorocarbon gas and a hydrocarbon gas having a flow rate 1 to 3 times that of the fluorocarbon gas is used, and the mixed gas is used in a plasma atmosphere under an operating pressure of 0.5 Pa or less. The interlayer insulating film introduced and covered with the resist mask is etched. [Selection] Figure 4 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101454878-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9165784-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8125069-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112007001243-B4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007135906-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012204367-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013004745-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4950188-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101190137-B1 |
priorityDate |
2004-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |