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filingDate 2004-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0a26139b4b1350a84e80f2094a0ba02
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publicationDate 2005-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2005251814-A
titleOfInvention Method and apparatus for dry etching of interlayer insulating film
abstract PROBLEM TO BE SOLVED: To make a resist mask fragile when fine patterning is performed using a laser having a short wavelength in a photolithography process. In this case, if etching is performed in a plasma atmosphere, the resist mask is damaged and edge roughness occurs in the edge portion of the patterned region. In this case, a uniform etching shape cannot be obtained in the depth direction. SOLUTION: A mixed gas containing a fluorocarbon gas and a hydrocarbon gas having a flow rate 1 to 3 times that of the fluorocarbon gas is used, and the mixed gas is used in a plasma atmosphere under an operating pressure of 0.5 Pa or less. The interlayer insulating film introduced and covered with the resist mask is etched. [Selection] Figure 4
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