http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001035834-A

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filingDate 1999-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a65d59aa48cdeac764baa5c454b69768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_220f9a55a1fcbc7de3e71d1fbe031df4
publicationDate 2001-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001035834-A
titleOfInvention Dry etching method
abstract (57) [Problem] To provide a dry etching method which has a good etching shape, does not deteriorate the quality of an organic low dielectric constant insulating film, and has a high etching rate. SOLUTION: In a dry etching method of a laminated film including an organic low-dielectric-constant insulating film formed as an interlayer insulating film, a gas which easily releases fluorine and a hydrocarbon gas or an fluorine which is easily released as an etching gas. Gas, a hydrocarbon gas, and a rare gas are introduced into a vacuum vessel in which a semiconductor substrate is installed, and high-frequency power is applied to plasma generating means to generate plasma, and the plasma is formed on the surface of the semiconductor substrate using the plasma. A dry etching method for etching an organic low dielectric constant insulating film.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4643916-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005251814-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101510171-B1
priorityDate 1999-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.