| abstract |
A method for forming a porous film having a low dielectric constant by heat treatment at a low temperature is provided. After coating a film-forming composition containing a polysiloxane, a pore-forming material, an onium salt, and a solvent on a semiconductor substrate, a first heat treatment is performed to remove the solvent from the film-forming composition. Is evaporated. Next, a second heat treatment is performed in an inert gas atmosphere to promote the polymerization of polysiloxane to form a polysiloxane resin film 3. Thereafter, by performing a third heat treatment in an oxidizing gas atmosphere, holes 4 are formed in the polysiloxane resin film 3. [Selection diagram] Fig. 1 |