| abstract |
An object of the present invention is to provide a metal-polishing liquid capable of producing an LSI that has a rapid CMP rate and is less susceptible to corrosion, scratching, thinning, dishing, erosion, and the like. A polishing liquid used for chemical mechanical polishing in the manufacture of a semiconductor device, comprising a specific structure phosphonic acid, a specific structure benzenesulfonic acid or sulfonic acid ester or phosphoric acid, a water-soluble metal salt thereof or ammonium acid A metal-polishing liquid comprising a compound selected from salts. [Selection figure] None |