| abstract |
A polishing composition and a polishing method using the same, which can perform a polishing process to suppress the occurrence of a recess in a copper wiring portion without impairing a polishing rate for a copper film. At least one abrasive of silicon dioxide and aluminum oxide, polyethylene oxide, polypropylene oxide, polyoxyethylene alkyl ether, polyoxypropylene alkyl ether, polyoxyethylene polyoxypropylene alkyl ether, and C≡C triple bond At least one organic compound of a polyoxyalkylene addition polymer having the formula: at least one polishing promoting compound of citric acid, oxalic acid, tartaric acid, glycine, α-alanine and histidine; and benzotriazole, benzimidazole, triazole, imidazole And a polishing composition containing at least one anticorrosive of tolyltriazole, hydrogen peroxide, and water, and a polishing method using the same. |