| abstract |
PROBLEM TO BE SOLVED: To provide a substantially homogeneous polymer mixture suitable for use in a photoresist composition for lithography. SOLUTION: A polymer mixture is provided for use in a photoresist composition for lithography (specifically, a chemically amplified photoresist). In a preferred embodiment, the polymer mixture is substantially transparent to far ultraviolet light (ie, radiation having a wavelength less than 250 nm, including wavelengths of 157 nm, 193 nm and 248 nm) and has improved photosensitivity and resolution. Having. A process for preparing and using the polymer mixture is also provided, as is a lithographic photoresist composition containing the polymer mixture. |