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filingDate 2002-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2003-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003243369-A
titleOfInvention Plasma processing method and apparatus
abstract PROBLEM TO BE SOLVED: To provide a plasma processing method and apparatus in which dust is hardly generated and a stable etching rate can be obtained. SOLUTION: A first high-frequency power source is evacuated by introducing a predetermined gas from a gas supply device 2 into a vacuum vessel 1 by a pump 3 as an exhaust device, and keeping the inside of the vacuum vessel 1 at a predetermined pressure. 5. A high frequency power of 13.56 MHz is supplied to the coil 8 by the By supplying a high frequency power of 500 kHz to the coil 8 by 6, the deposition of the deposited film on the surface of the dielectric plate 7 is prevented while generating plasma in the vacuum vessel 1.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10079133-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160138590-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011096689-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106463393-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106463393-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016114232-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2006073127-A1
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