| abstract |
PROBLEM TO BE SOLVED: To provide a CMP polishing agent and a substrate polishing method capable of obtaining a highly planarized substrate by high-speed polishing without generating polishing scratches leading to poor electrical characteristics. I do. SOLUTION: The cerium oxide particles are mixed so that the weight ratio of water-soluble polymer / cerium oxide particles becomes 1 to 3, and the electric conductivity of the abrasive is 0.5 to 5.0 mS / cm. CMP abrasive containing polymer and water, electric conductivity of 0.5 to 5.0 mS / cm, cerium oxide particle concentration of 0.5 ~ 3.0% by weight, and the concentration of the water-soluble polymer is 0.5 ~ 3.0. A CMP abrasive containing cerium oxide particles, a water-soluble polymer, and water in a weight% is supplied to a polishing pad on a polishing platen, and a polishing target surface of a substrate, which is a semiconductor chip having a silicon oxide insulating film formed thereon, is removed. A polishing method for a substrate, comprising: bringing a polishing surface into contact with a polishing pad to make relative movement to polish the substrate. |