http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002249455-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C45-77
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filingDate 2001-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8033a57fd034477697005e0d6fd313bb
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publicationDate 2002-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002249455-A
titleOfInvention Method for producing high-purity hafnium complex Hf (DPM) 4
abstract PROBLEM TO BE SOLVED: To provide a hafnium complex Hf (DP) as a raw material for forming a hafnium-containing metal oxide film by a CVD method. M) Provision of a method for producing 4 with ultra-high purity and good reproducibility. SOLUTION: Under an inert gas atmosphere, hafnium chloride and dipivaloylmethane are put into a purified and dehydrated organic solvent, heated and refluxed to cause a direct reaction, and the solution is concentrated. Then, the concentrated solution is cooled. By sufficiently purifying the obtained crystals by recrystallization, the content of metal impurities is 0.01 wt. Ppm or less and the purity is 99.99 w / w. A method for producing a high-purity hafnium complex represented by a structural formula of Hf (DPM) 4 of 999 wt.% Or more.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10526697-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005197675-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113219110-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102360536-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009292731-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200072562-A
priorityDate 2001-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 29.