http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005197675-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3b0a3dbf8d6c9712d86ea1383fd5327 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C211-65 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
filingDate | 2004-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_670fbf340840ebaff8a02449b58cdbcb |
publicationDate | 2005-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2005197675-A |
titleOfInvention | Hafnium-containing film forming material and hafnium-containing film produced from the material |
abstract | A film having excellent adhesion during film formation can be obtained, and film formation stability and step coverage can be improved. The present invention is an improvement of a hafnium-containing film forming material containing an organic hafnium compound having a hafnium atom as a central metal as a main component, and the characteristic configuration includes a tantalum element in the forming material, and the content of the tantalum element is increased. Either within the range of 0.05 to 8 ppm, including tungsten element in the forming material, and defining the content of tungsten element within the range of 0.05 to 8 ppm, or tantalum element and tungsten in the forming material Each element is included, and the total content of the tantalum element and the tungsten element is defined within a range of 0.05 to 8 ppm. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101918768-B1 |
priorityDate | 2003-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.