http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002124485-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2000-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35b1a3407a95f28a94864ebb7687edd1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_815442485e2a52580edb622b4a56499b |
| publicationDate | 2002-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002124485-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | PROBLEM TO BE SOLVED: To improve the bottom ratio of a contact hole and a via hole due to an increase in aspect ratio of a contact hole and a via hole accompanying miniaturization of a semiconductor integrated circuit. Issues. SOLUTION: At the time of removing oxide from a contact hole bottom 7 by argon plasma treatment, the absolute value of a self-bias voltage applied to a semiconductor substrate is set to 100 V or more, so that the straightness of argon ions in the wafer direction is increased. Therefore, the oxide at the contact hole bottom 7 can be efficiently and satisfactorily removed, and stable contact resistance and stable wiring reliability can be realized. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100884852-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100822493-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010056567-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005015622-A1 |
| priorityDate | 2000-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.