http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100822493-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 |
| filingDate | 2004-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100822493-B1 |
| titleOfInvention | Deposition Method |
| abstract | A titanium silicide film 4 is formed on the Si wafer 1. For this reason, first, the Si wafer 1 is processed by plasma using high frequency. Next, a Ti-containing raw material gas is supplied onto the Si-containing portion subjected to the plasma treatment to form a plasma to form a Ti film, and the titanium silicide film is reacted by the Ti film and Si in the Si-containing portion at that time. (4) is formed. The processing by the plasma of the Si wafer 1 is performed while applying the DC bias voltage Vdc of 200 V or more in absolute value to the Si wafer 1. |
| priorityDate | 2003-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.