| abstract |
(57) Abstract: In a resist material containing a base resin, an acid generator and a solvent, the acid generator contains a compound represented by the following general formula (1) and / or (2). A resist material comprising: Embedded image (Wherein R 1 and R 2 are the same or different fluorine atoms or fluorinated alkyl groups having 1 to 10 carbon atoms, and 0 ≦ a ≦ 5, 0 ≦ b ≦ 5, and 1 ≦ a + b ≦ 10. The resist material of the present invention is sensitive to ArF excimer laser light, has excellent sensitivity and resolution, and is advantageous in etching because it can be made thicker, so that it is finer and more suitable for substrates. And a vertical pattern can be easily formed. |