| abstract |
PROBLEM TO BE SOLVED: To prevent a surface roughness of a film from being formed or to prevent a crack from being formed in a film having a large film thickness, and to form a film having a low relative dielectric constant of 2.7 or less. Provided is a film formation method capable of obtaining a dielectric constant. SOLUTION: A film forming gas formed by adding an inert gas for dilution or a nitrogen gas (N 2 ) to a main gas component for film forming composed of siloxane and N 2 O is turned into plasma, By reacting, an insulating film 22 is formed on the deposition target substrate 21. |