http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001154366-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 1999-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7eb9187837867c9c08b7a2db9ce85446 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51fa0ce4d4abeeaeb492059877858d89 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad60b78d1616f3cba147e2333490c4a0 |
| publicationDate | 2001-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001154366-A |
| titleOfInvention | Pattern forming method using resist composition containing silicon-containing polymer |
| abstract | (57) Abstract: A pattern forming method using a resist composition containing a silicon-containing polymer, which is excellent in O 2 -RIE resistance and enables a fine pattern to be formed by development using an alkali developing solution. . SOLUTION: A lower resist layer is formed with a first resist material, and on the lower resist layer, a general formula (1) (where R is a skeleton of a silicon-containing polymer, Ra, Rb, and Rc are each independently an alkyl group, an alkenyl Group, aryl group or general formula (2) (Wherein, Rd: divalent organic group, Re: —H, monovalent organic group or organosilyl group, Ra to Re: one or more kinds of functional groups, p, q: an integer of 1 or more, r: 0 Or forming an upper resist layer with a second resist material containing a silicon-containing polymer represented by 1), exposing the upper resist layer, baking after exposure, and developing and patterning; The lower resist layer is etched using the upper resist layer remaining by patterning as a mask. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7439010-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6949324-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9823564-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016029498-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11693312-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11599022-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100943118-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10782610-B2 |
| priorityDate | 1999-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.