http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100943118-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0233 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-023 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate | 2002-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100943118-B1 |
| titleOfInvention | Alkali-soluble siloxane polymer, positive type resist composition, resist pattern and manufacturing method thereof, and electronic circuit device and manufacturing method thereof |
| abstract | An object of the present invention is to provide a positive resist composition having excellent oxygen plasma resistance, resolution, storage stability and the like. The positive resist composition of the present invention contains an alkali-soluble siloxane polymer represented by the following formula (1) and a photosensitive compound having a 1,2-naphthoquinone diazide group, and has an i-ray transmittance of 5 to 60% of a 1 μm coating film. It is characterized by.n n n n n n n n n n In Formula 1, R 1 and R 2 represent a monovalent organic group, may be the same as or different from each other, A means a group having a phenolic hydroxyl group represented by the formula (2), a + b + c = 1n n n n n n n n n n In said Formula (2), R < 3> , R < 4> and R < 5> represent a hydrogen atom or monovalent organic group, may be mutually same or different, m represents an integer and n represents the integer of 1-5. It is preferable that the form is used for a resist film subjected to an oxygen plasma etching process, such as 0.25? A? 0.60 and 0? C? 0.25.n n n n Oxygen plasma resistance, resolution, storage stability, positive resist composition, alkali-soluble siloxane polymer, 1,2-naphthoquinone diazide group, photosensitive compound |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190087595-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102465013-B1 |
| priorityDate | 2001-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.