| abstract |
PROBLEM TO BE SOLVED: To provide a metal polishing method which expresses a high CMP rate, enables high flatness, reduces dishing amount and erosion amount, and enables formation of a highly reliable buried pattern of a metal film. I will provide a. SOLUTION: A metal polishing solution containing a metal oxidizing agent, a metal oxide dissolving agent, a protective film forming agent, and water is supplied, and the metal film on the substrate has a frictional resistance of 9 while supplying the metal polishing solution. A metal polishing method characterized by polishing using a polishing cloth having a pressure of 2,000 to 25,000 Pa. |