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filingDate 1997-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2000-02-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2000502512-A
titleOfInvention Method for anisotropic plasma processing of various substrates
abstract (57) Abstract: The present invention relates to a method for producing in a substrate an etched structure using anisotropic plasma processing, in which case it is alternatively or separately provided independently of each other. An anisotropic etching step and sidewall passivation are performed, wherein the substrate (2) is a polymer, metal or multi-component system and the sidewall passivation layer applied during the sidewall passivation A portion (8) of (6) is provided on each exposed side (7 ') of the side wall (7) during the next etching step, whereby the whole process is made anisotropic.
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