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filingDate 1998-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d2f983fc307994dde66ad758b159cec
publicationDate 2000-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2000195840-A
titleOfInvention Etching apparatus and etching method
abstract (57) [PROBLEMS] To efficiently etch a film formed on a wafer in an etching apparatus used for manufacturing a piezoelectric element, a semiconductor element, or the like. An inner hollow bell jar 16 having an opening at a lower portion, a wafer mounting table 11 disposed inside or below the bell jar 16, a space between the wafer mounting table 11 and the bell jar 16, and The gas concentrator 17 includes a dome-shaped gas concentrator 17 having an opening 17a at an upper portion, and a gas inlet 12 disposed between the gas concentrator 17 and the bell jar 16 on the side of the gas concentrator 17.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008517453-A
priorityDate 1998-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 23.