| abstract |
An object of the present invention is to provide a positive resist composition which has excellent residual film ratio and resist profile with respect to deep ultraviolet rays, particularly ArF excimer laser light, and does not cause problems of development defects. A compound capable of generating an acid upon irradiation with actinic rays or radiation, a resin having a polycyclic alicyclic group and a carboxyl group, a compound having at least two enol ether groups having a specific structure, and a specific organic carboxylic acid A positive resist composition containing an acid, a nitrogen-containing basic compound, and a fluorine-based and / or silicon-based surfactant. |