http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2322734-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31051 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate | 1997-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83873cc07a39a6847242392bb6b3a736 |
| publicationDate | 1998-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-2322734-A |
| titleOfInvention | Semiconductor device and a method of manufacturing the same |
| abstract | In a method of manufacturing a semiconductor device, a BPSG film is formed as an interlayer insulating film. A process is then applied to the BPSG film for making a surface of the BPSG film hydrophobic. This process comprises supplying an organic compound gas such as ethyl alcohol gas, and a gas containing O 2 and O 3 and is carried out, at a temperature equal to or higher than that used in BPSG film formation. Then, the BPSG film is reflowed such that the BPSG film surface is flattened. Segregation of B and P atoms is thereby prevented. |
| priorityDate | 1997-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.