| abstract |
The limit of B and P concentrations is surmounted by changing the surface of borophosphosilicate glass with a surface treatment such as plasma (3) processing of N₂O, O₃ or O₂, and encroachment caused by H₂SO₄ boiling or by humidity absorption from the exterior is also removed such that low temperature reflow process below 850°C is established and an interlayer dielectric film (2) of excellent planarity is formed. |