| abstract |
A method for making a semiconductor and an apparatus for the same are disclosed. A method for making a semiconductor using corona discharge comprises the steps of: supplying a reactive gas to, at least, one electrode (14) capable of generating corona discharge above a substrate (12) with an RF power source (13) under the atmosphere; irradiating ions or radicals resulted from the decomposition of said reactive gas by said corona discharge to said substrate; allowing said ions or radicals to be chemically reacted with said substrate or be diffused in said substrate. An exhaust system prevents the substrate being contaminated by external air. The method is used for doping the semiconductor, etching it cleaning it, depositing it or forming an insulating layer on its surface. <IMAGE> |