| abstract |
Disclosed is a method of producing an electronic device with a multilayer structure comprising one or more thin semiconductor layers 231, 232, 233 formed on a substrate 234. The method comprises forming at least one of the thin layers by the method of chemical vapor deposition in plasma and at least one other of the layers by a method of introducing a starting gaseous material for the formation of a deposited film and a gaseous oxidant containing a halogen and having the property of producing a oxidation action on the starting material, in a reaction space. Chemical contact between the starting material and the oxidant produces a precursor which is then used as a feed source for the component of the deposited film. Field of application: production of multilayer transistors, solar cells, imaging elements for electrophotography, etc. (CF DRAWING IN BOPI) |