| abstract |
First, a patterned substrate including an insulating substrate, a conductive seed layer, and an insulating layer is prepared. The seed layer is disposed on the insulating substrate, and consists of a first part having a predetermined pattern corresponding to the wiring pattern and a second part as a part other than the first part. The insulating layer is disposed on the second part of the seed layer. Subsequently, a metal layer having a thickness larger than a thickness of the insulating layer is formed on the first part of the seed layer. Here, a voltage is applied between an anode and the seed layer while a resin film containing a metal ion-containing solution is disposed between the patterned substrate and the anode and the resin film and the seed layer are brought into pressure contact. Subsequently, the insulating layer and the second part of the seed layer are removed. |