| abstract |
A thin film formation method in accordance with the presentninvention forms banks (110) where affinity bank layers and non-affinitynbank layers are alternately layered by repeating a step ofnforming an affinity bank layer (111 - 11n) with a material havingnaffinity for a thin film material solution (130) (such inorganicnmaterial as SiO 2 ) and a step of forming a non-affinity bank layern(121 - 12n) with a material having non-affinity for the thin film materialnsolution (130) (such organic material as resist) one or more times.nFinally the thin film material solution (130) is filled between banksnby an ink jet method, heat treatment is executed, and a thin filmnlayer (131 - 13n) is sequentially layered. By these steps, costnrequired for affinity control can be decreased and forming multi-layernthin films with uniform film thickness becomes possible. |