| abstract |
The method described provides for the formation of a region of silicon dioxide on a substrate (11) of monocrystalline silicon, the epitaxial growth of a silicon layer, the opening of holes (14') in the silicon layer above the silicon dioxide region, and the removal of the silicon dioxide which constitutes the region by means of chemical attack through the holes (14') until a silicon diaphragm (12'), attached to the substrate (11) along the edges and separated therefrom by a space (15), is produced. In order to form an absolute pressure microsensor, the space has to be sealed. To do this, the method provides for the holes (14') to have diameters smaller than the thickness of the diaphragm (12') and to be closed by the formation of a silicon dioxide layer (16) by vapour-phase deposition at atmospheric pressure. <IMAGE> <IMAGE> |