http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102574676-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_14ba71eccbb5f65a22b78f39b3c6ffc3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-0127 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-0109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0264 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0109 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00476 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00047 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 |
| filingDate | 2010-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b9fe443241823c701802babb0f58b68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b3e7d0e29d7debf99a777c72b15924e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_426df9b79cf2798abd3ab33be6eeb60a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c092d68282c782ada81686a5d61f95d |
| publicationDate | 2015-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102574676-B |
| titleOfInvention | Process for manufacturing MEMS devices having buried cavities and MEMS device obtained thereby |
| abstract | A process for manufacturing a MEMS device, wherein a bottom silicon region (4b) is formed on a substrate and on an insulating layer (3); a sacrificial region (5a) of dielectric is formed on the bottom region; a membrane region (21), of semiconductor material, is epitaxially grown on the sacrificial region; the membrane region is dug as far as the sacrificial region so as to form through trenches (15); the side wall and the bottom of the through trenches are completely coated in a conformal way with a porous material layer (16); at least one portion of the sacrificial region is selectively removed through the porous material layer and forms a cavity (18); and the through trenches are filled with filling material (20a) so as to form a monolithic membrane suspended above the cavity (18). |
| priorityDate | 2009-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.