| abstract |
A dry etching method comprises the steps of introducing etching and deposition gases alternately into a reaction chamber (3) at predetermined time intervals, etching the exposed surface of an article (7) to be etched and applying deposition to the surface film thereof alternately by causing the plasma generated by applying power to the etching and deposition gases introduced into the reaction chamber (3) to come into contact with the article (7) to be etched in the reaction chamber (3) in order to etch the surface. n The power is applied after the passage of a predetermined time from the start of the introduction of the deposition gas and before the etching gas is introduced, and is cut off when the introduction of the etching gas is suspended. |