| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate |
1998-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb20acc243f36c98117d071cfc9d35dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c63a121581562146b90098233ebd04c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4994efa5769926e4effceaacde5315e5 |
| publicationDate |
1999-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-19820488-A1 |
| titleOfInvention |
Manufacturing method of a semiconductor device |
| abstract |
A semiconductor device is produced by forming an interlayer insulation layer (6) to cover a floating connection layer (3) on a substrate (100), forming a connection via (4) through the layers (6, 3) by dry etching using a fluorocarbon and forming a conductive plug (5) in the via for electrical connection to the connection layer (3). Independent claims are also included for production of similar devices which have: (i) a rib capacitor; or (ii) several floating polysilicon layers. |
| priorityDate |
1997-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |