| abstract |
A semiconductor device includes an interlayer insulating film disposed on a substrate; a plurality of intermediate connections disposed in the interlayer insulating layer; a pad disposed on the interlayer insulating layer; a top link disposed on the interlayer insulating layer; a protective insulating layer covering an edge of the pad, the top link, and a horizontal gap between the pad and the top link, the protective insulating layer having an opening on the pad; and a bump disposed on the pad, the bump extending on the protective insulating layer and overlapping the top joint from a plan view. At least one of the plurality of middle links of middle links vertically closest to the pad has a first vertical thickness, the pad has a second vertical thickness that is two to 100 times the first vertical thickness, a length the gap between the pad and the upper joint is 1 µm or more, and an upper surface of the protective insulating layer is planar. |