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filingDate 2001-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2007-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-10142600-B4
titleOfInvention Silicon-containing resist for photolithography at short exposure wavelengths
abstract Chemically enhanced photoresist comprising: a polymer having acid labile radicals attached to a polar group such that after cleavage of the acid labile radicals the solubility of the polymer in polar developers is increased, and further having anchor groups to which a linking group of an amplification agent can be attached the polymer contains the following repeating units: first repeating units which have a structure of the formula I, FORMULA I in which means: A: a single bond, -O-; B: - (CR 5 R 6 ) n -, - (O- (CR 5 R 6 )) n -, a cycloalkylene group having 5 to 20 carbon atoms, an arylene group having 6 to 22 carbon atoms; R 1 is -H, an alkyl group of 1 to 10 carbon atoms, -CN, -CF 3 ; R 2 , R 3 , R 9 : an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 5 to 20 carbon atoms, an aryl group having 6 to 22 carbon atoms, these groups also having one attached via an ether or ester bond or via an acetal bond, can carry acid-cleavable group; a...
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