http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10011253-A1

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filingDate 2000-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ec22a25ac9ae4ac1e477e8ac6cb3e48
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publicationDate 2001-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-10011253-A1
titleOfInvention Controlled pore etching in semiconductors
abstract An apparatus for the electrochemical etching of pores of all types in semiconductors comprises internal longitudinal scales of the whole system located in a suitable size. The balance between the directly dispersed and the oxidizing part of the current and the nucleation of the pores are optimized. The system is synchronized and stabilized using a suitably selected control signal in the frequency region of the internal system frequencies. In-situ measurements of the transfer resistance are used for continuous fine control. Preferred Features: The change of the oxide dispersion kinetics is carried out by changing the HF concentration, by changing the viscosity of the electrolytes and by adjusting the pH value or the temperature.
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