| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 |
| filingDate |
2016-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b950a7e82fbdb7de175d21f175994c55 |
| publicationDate |
2021-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-113436969-A |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
The invention provides a method for manufacturing a semiconductor device capable of reducing contact resistance and improving reliability. First, a barrier metal (6) is formed on the surface of an interlayer insulating film (2) and the inner wall of a trench (3) formed in a semiconductor portion exposed in a contact hole (2a), and RTA heat treatment and plasma nitridation treatment are performed, and then a plug (7) is buried inside the barrier metal (6) in the contact hole (2a) and the trench (3). The RTA-based heat treatment is performed at a temperature of about 500 ℃ or higher and 650 ℃ or lower. The plasma nitridation treatment is performed at a temperature lower than the RTA-based heat treatment temperature. The barrier metal (6) is formed by sequentially forming a first metal film (4) made of titanium and a second metal film (5) made of titanium nitride. The plug (7) is made of tungsten. A front electrode (8) made of aluminum is formed from the surface of the second metal film (5) on the interlayer insulating film (2) to the surface of the plug (7). |
| priorityDate |
2015-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |