http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112470552-A

Outgoing Links

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filingDate 2019-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bad5bef7865bd37cc97a3e65ffd9691f
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publicationDate 2021-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-112470552-A
titleOfInvention Plasma processing device
abstract The plasma processing apparatus of the present invention has: a vacuum container, the internal pressure of which can be controlled; a gas supply unit; an electrode, which is arranged in the vacuum container and has a substrate mounted on the upper surface; One end of the antenna that forms inductive coupling is connected to the high-frequency power supply via a matching circuit, and the other end of the antenna is an open end. The length of the antenna is less than 1/2λ of the wavelength (λ) of the RF frequency. On the RF power supply side of the antenna, a The impedance adjustment circuit connected in parallel with the antenna can adjust the reactance component of the composite impedance of the impedance adjustment circuit from the capacitive load to the inductive load with respect to the RF frequency supplied to the antenna.
priorityDate 2018-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 28.